Optical Analysis of 1300 nm GaInNAsSb/GaAs Vertical Cavity Semiconductor Optical Amplifier

Faten Adel Ismael Chaqmaqchee; Shawbo Abdulsamad Abubekr Salh; Mohammed Faeq Mohammed Sabri

doi:10.21271/ZJPAS.32.2.9

Authors

Faten Adel Ismael Chaqmaqchee Department of Physics, Faculty of Science and Health, Koya University, University Park, Danielle Mitterrand Boulevard, Koya KOY45, Kurdistan Region-F.R. Iraq
Shawbo Abdulsamad Abubekr Salh Department of Physics, Faculty of Science and Health, Koya University, University Park, Danielle Mitterrand Boulevard, Koya KOY45, Kurdistan Region-F.R. Iraq
Mohammed Faeq Mohammed Sabri Department of Physics, Faculty of Science and Health, Koya University, University Park, Danielle Mitterrand Boulevard, Koya KOY45, Kurdistan Region-F.R. Iraq

DOI:

https://doi.org/10.21271/ZJPAS.32.2.9

Keywords:

Vertical cavity semiconductor optical amplifier (VCSOA), distributed Bragg reflectors (DBRs), quantum wells (QWs), gain, amplifier bandwidth, mirror reflectivity.

Abstract

Vertical cavity semiconductor optical amplifiers (VCSOAs) based on GaInNAsSb active region is designed to operate in reflection mode at wavelength of 1300 nm. Addition of antimony Sb to the GaInNAs has dramatically improve the performance of VCSOAs, where the wavelength shifts to longer wavelength. This study is aimed to design GaInNAsSb/GaAs quantum wells (QWs) enclosed between various periods of front and 25-periods of back of AlGaAs/GaAs distributed Bragg mirrors (DBRs) by using MATLAB. GaInNAsSb can be grown and lattice matched to GaAs with a very small band gap and it can be grown monolithically on high quality GaAs/AlGaAs distributed Bragg reflector. Peak reflection gain at around of 53.2 dB at single pass gain of 1.076 is observed. In addition, amplifier bandwidth at various front back mirrors reflectivities is simulated to achieve high gain and wide optical bandwidth at low reflectivity of front mirrors.

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